A 2nd generation of 14/16nm-node compatible strained-Ge pFINFET with improved performance with respect to advanced Si-channel FinFETs

Mitard, JeromeJeromeMitardWitters, LiesbethLiesbethWittersSasaki, YuichiroYuichiroSasakiArimura, HiroakiHiroakiArimuraSchulze, AndreasAndreasSchulzeLoo, RogerRogerLooRagnarsson, Lars-AkeLars-AkeRagnarssonHikavyy, AndriyAndriyHikavyyCott, DaireDaireCottChiarella, ThomasThomasChiarellaKubicek, StefanStefanKubicekMertens, HansHansMertensRitzenthaler, RomainRomainRitzenthalerVrancken, ChristaChristaVranckenFavia, PaolaPaolaFaviaBender, HugoHugoBenderHoriguchi, NaotoNaotoHoriguchiBarla, KathyKathyBarlaMocuta, DanDanMocutaMocuta, AndaAndaMocutaCollaert, NadineNadineCollaertThean, AaronAaronThean2021-10-232021-10-232016-06https://imec-publications.be/handle/20.500.12860/27016A 2nd generation of 14/16nm-node compatible strained-Ge pFINFET with improved performance with respect to advanced Si-channel FinFETsProceedings paperhttp://ieeexplore.ieee.org/document/7573368/?tp=&arnumber=7573368