Mechanisms for undesired nucleation on H-terminated Si and dimethylamino-trimethylsilane passivated SiO2 during TiO2 area-selective atomic layer deposition

Nye, RachelRachelNyeSong, Seung KeunSeung KeunSongVan Dongen, KaatKaatVan DongenDelabie, AnneliesAnneliesDelabieParsons, Gregory N.Gregory N.Parsons2023-05-252022-11-202023-05-2520220003-6951WOS:000883065000012https://imec-publications.be/handle/20.500.12860/40762Mechanisms for undesired nucleation on H-terminated Si and dimethylamino-trimethylsilane passivated SiO2 during TiO2 area-selective atomic layer depositionJournal article10.1063/5.0106132WOS:000883065000012GROWTHSILICON