Anomalous threshold voltage change by 2 MeV electron irradiation at 100°C in deep submicron metal-oxide-semiconductor field-effect transistors

Hayama, K.K.HayamaOhyama, H.H.OhyamaSimoen, EddyEddySimoenRafi, Joan MarcJoan MarcRafiMercha, AbdelkarimAbdelkarimMerchaClaeys, CorCorClaeys2021-10-152021-10-152004-04https://imec-publications.be/handle/20.500.12860/9000Anomalous threshold voltage change by 2 MeV electron irradiation at 100°C in deep submicron metal-oxide-semiconductor field-effect transistorsJournal article