Improvement of He ion induced SiGe layer relaxation by a thin Si:C layer

Buca, D.D.BucaTrinkaus, H.H.TrinkausHolländer, B.B.HolländerLoo, RogerRogerLooNguyen, DuyDuyNguyenMantl, S.S.Mantl2021-10-172021-10-172008https://imec-publications.be/handle/20.500.12860/13466Improvement of He ion induced SiGe layer relaxation by a thin Si:C layerProceedings paper