O'Sullivan, BarryBarryO'SullivanAoulaiche, MarcMarcAoulaicheCho, Moon JuMoon JuChoKauerauf, ThomasThomasKaueraufDegraeve, RobinRobinDegraeveOkawa, HiroshiHiroshiOkawaSchram, TomTomSchramHoffmann, Thomas Y.Thomas Y.HoffmannGroeseneken, GuidoGuidoGroesenekenBiesemans, SergeSergeBiesemansNakabayashi, TakashiTakashiNakabayashiIkeda, AtsushiAtsushiIkedaNiwa, MasaakiMasaakiNiwa2021-10-182021-10-1820090021-8979https://imec-publications.be/handle/20.500.12860/15958Quantification of MOSFET device reliability with low-Vt lanthanum-incorporated high permittivity dielectricsJournal article