Thermal Modelling of GaN & InP RF Devices with Intrinsic Account for Nanoscale Transport Effects

Vermeersch, BjornBjornVermeerschRodriguez, RaulRaulRodriguezSibaja-Hernandez, ArturoArturoSibaja-HernandezVais, AbhitoshAbhitoshVaisYadav, SachinSachinYadavParvais, BertrandBertrandParvaisCollaert, NadineNadineCollaert2023-06-022023-05-252023-06-0220222380-9248WOS:000968800700029https://imec-publications.be/handle/20.500.12860/41623Thermal Modelling of GaN & InP RF Devices with Intrinsic Account for Nanoscale Transport EffectsProceedings paper10.1109/IEDM45625.2022.10019370978-1-6654-8959-1WOS:000968800700029