Spectroscopic ellipsometry in the VUV range applied to the characterization of atomic layer deposited HfO2,Al2O3 and HfAlOx thin layers for high k dielectrics

Boher, P.P.BoherDefranoux, C.C.DefranouxBourtault, S.S.BourtaultPiel, J.P.J.P.PielBender, HugoHugoBender2021-10-152021-10-152003https://imec-publications.be/handle/20.500.12860/7237Spectroscopic ellipsometry in the VUV range applied to the characterization of atomic layer deposited HfO2,Al2O3 and HfAlOx thin layers for high k dielectricsProceedings paper