First demonstration of vertically-stacked gate-all-around highly-strained germanium nanowire p-FETs

Capogreco, ElenaElenaCapogrecoWitters, LiesbethLiesbethWittersArimura, HiroakiHiroakiArimuraSebaai, FaridFaridSebaaiPorret, ClémentClémentPorretHikavyy, AndriyAndriyHikavyyLoo, RogerRogerLooMilenin, AlexeyAlexeyMileninEneman, GeertGeertEnemanFavia, PaolaPaolaFaviaBender, HugoHugoBenderWostyn, KurtKurtWostynDentoni Litta, EugenioEugenioDentoni LittaSchulze, AndreasAndreasSchulzeVrancken, ChristaChristaVranckenOpdebeeck, AnnAnnOpdebeeckMitard, JeromeJeromeMitardLanger, RobertRobertLangerHolsteyns, FrankFrankHolsteynsWaldron, NiamhNiamhWaldronBarla, KathyKathyBarlaDe Heyn, VincentVincentDe HeynMocuta, DanDanMocutaCollaert, NadineNadineCollaert2021-10-252021-10-252018https://imec-publications.be/handle/20.500.12860/30358First demonstration of vertically-stacked gate-all-around highly-strained germanium nanowire p-FETsProceedings paperhttps://ieeexplore.ieee.org/document/8510645