Effect of gate interface on performance degration of irradiated SiC-MESFET

Ohyama, H.H.OhyamaTakakura, K.K.TakakuraYoneoka, M.M.YoneokaUemura, K.K.UemuraMotoki, M.M.MotokiMatsuo, K.K.MatsuoArai, M.M.AraiKuboyama, S.S.KuboyamaSimoen, EddyEddySimoenClaeys, CorCorClaeys2021-10-162021-10-162007https://imec-publications.be/handle/20.500.12860/12636Effect of gate interface on performance degration of irradiated SiC-MESFETJournal article