Analysis of the interface trap density in SOI FinFETs with different TiN gate electrode thickness through charge pumping technique

Rodrigues, MicheleMicheleRodriguesCho, Moon JuMoon JuChoMartino, J.A.J.A.MartinoCollaert, NadineNadineCollaertMercha, AbdelkarimAbdelkarimMerchaSimoen, EddyEddySimoenClaeys, CorCorClaeys2021-10-182021-10-182009-09https://imec-publications.be/handle/20.500.12860/16113Analysis of the interface trap density in SOI FinFETs with different TiN gate electrode thickness through charge pumping techniqueProceedings paper