Wang, RuijunRuijunWangSprengel, StephaneStephaneSprengelMuneeb, MuhammedMuhammedMuneebBoehm, GerhardGerhardBoehmMailik, AdityaAdityaMailikBaets, RoelRoelBaetsAmann, Markus-ChristianMarkus-ChristianAmannRoelkens, GuntherGuntherRoelkens2021-10-232021-10-232016https://imec-publications.be/handle/20.500.12860/27573Heterogeneous integration of InP-based type-II active devices on silicon for 2 μm wavelength range on-chip spectroscopyProceedings paper