Pantisano, LuigiLuigiPantisanoAfanasiev, ValeriValeriAfanasievRagnarsson, Lars-AkeLars-AkeRagnarssonHoussa, MichelMichelHoussaDegraeve, RobinRobinDegraeveGroeseneken, GuidoGuidoGroesenekenDe Gendt, StefanStefanDe GendtHeyns, MarcMarcHeyns2021-10-162021-10-162005https://imec-publications.be/handle/20.500.12860/10977On the impact of the high-k properties (and defects) on the MOSFET electrical characteristicsProceedings paper