Trap reduction and performances improvements study after high pressure anneal process on single crystal channel 3D NAND devices

Subirats, AlexandreAlexandreSubiratsArreghini, AntonioAntonioArreghiniDelhougne, RomainRomainDelhougneRosseel, ErikErikRosseelHikavyy, AndriyAndriyHikavyyBreuil, LaurentLaurentBreuilVadakupudhu Palayam, SenthilSenthilVadakupudhu PalayamVan den Bosch, GeertGeertVan den BoschLinten, DimitriDimitriLintenFurnemont, ArnaudArnaudFurnemont2021-10-262021-10-262018https://imec-publications.be/handle/20.500.12860/31880Trap reduction and performances improvements study after high pressure anneal process on single crystal channel 3D NAND devicesProceedings paperhttps://ieeexplore.ieee.org/document/8614667