Material developments and domain wall based nanosecond-scale switching process in perpendicularly magnetized STT-MRAM cells

Devolder, ThibautThibautDevolderKim, Joo-VonJoo-VonKimSwerts, JohanJohanSwertsCouet, SebastienSebastienCouetRao, SiddharthSiddharthRaoKim, WoojinWoojinKimMertens, SofieSofieMertensKar, Gouri SankarGouri SankarKarNikitin, VladimirVladimirNikitin2021-10-252021-10-2520180018-9464https://imec-publications.be/handle/20.500.12860/30616Material developments and domain wall based nanosecond-scale switching process in perpendicularly magnetized STT-MRAM cellsJournal articlehttp://ieeexplore.ieee.org/document/8017454/