Charge trapping in SiO2/HfO2 gate dielctrics: comparison between charge-pumping and pulsed I-D-V-G

Kerber, A.A.KerberCartier, E.E.CartierPantisano, LuigiLuigiPantisanoDegraeve, RobinRobinDegraeveGroeseneken, GuidoGuidoGroesenekenMaes, HermanHermanMaesSchwalke, U.U.Schwalke2021-10-152021-10-152004https://imec-publications.be/handle/20.500.12860/9116Charge trapping in SiO2/HfO2 gate dielctrics: comparison between charge-pumping and pulsed I-D-V-GJournal article