Gate-all-around nanowire FETs vs. triple-gate FinFETs: on gate integrity and device characteristics

Veloso, AnabelaAnabelaVelosoCho, Moon JuMoon JuChoSimoen, EddyEddySimoenHellings, GeertGeertHellingsMatagne, PhilippePhilippeMatagneCollaert, NadineNadineCollaertThean, AaronAaronThean2021-10-232021-10-232016https://imec-publications.be/handle/20.500.12860/27511Gate-all-around nanowire FETs vs. triple-gate FinFETs: on gate integrity and device characteristicsMeeting abstracthttp://ma.ecsdl.org/content/MA2016-01/16/992.abstract