Read and pass disturbance in the programmed states of floating gate Flash memory cells with high- $j inter-poly gate dielectric stacks

Tang, BaojunBaojunTangRobinson, ColinColinRobinsonZhang, WeidongWeidongZhangZhang, FujianFujianZhangDegraeve, RobinRobinDegraeveBlomme, PieterPieterBlommeToledano Luque, MariaMariaToledano LuqueVan den Bosch, GeertGeertVan den BoschGovoreanu, BogdanBogdanGovoreanuVan Houdt, JanJanVan Houdt2021-10-212021-10-212013-070018-9383https://imec-publications.be/handle/20.500.12860/23152Read and pass disturbance in the programmed states of floating gate Flash memory cells with high- $j inter-poly gate dielectric stacksJournal articlehttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6527944