First demonstration of strained Ge-in-STI IFQW pFETs featuring raised SiGe75% S/D, replacement metal gate and germanided local interconnects

Mitard, JeromeJeromeMitardWitters, LiesbethLiesbethWittersVincent, BenjaminBenjaminVincentFranco, JacopoJacopoFrancoFavia, PaolaPaolaFaviaHikavyy, AndriyAndriyHikavyyEneman, GeertGeertEnemanLoo, RogerRogerLooBrunco, DavidDavidBruncoKabir, NafeesNafeesKabirBender, HugoHugoBenderSebaai, FaridFaridSebaaiVos, RitaRitaVosMertens, PaulPaulMertensMilenin, AlexeyAlexeyMileninVecchio, EmmaEmmaVecchioRagnarsson, Lars-AkeLars-AkeRagnarssonCollaert, NadineNadineCollaertThean, AaronAaronThean2021-10-212021-10-212013https://imec-publications.be/handle/20.500.12860/22812First demonstration of strained Ge-in-STI IFQW pFETs featuring raised SiGe75% S/D, replacement metal gate and germanided local interconnectsProceedings paper