The over-reset phenomenon in Ta2O5 RRAM device investigated by the RTN-based defect probing technique

Chai, ZhengZhengChaiZhang, WeidongWeidongZhangFreitas, PedroPedroFreitasHatem, FirasFirasHatemZhang, Jian FuJian FuZhangMarsland, JohnJohnMarslandGovoreanu, BogdanBogdanGovoreanuGoux, LudovicLudovicGouxKar, Gouri SankarGouri SankarKarHall, SteveSteveHallChalker, PaulPaulChalkerRobertson, johnjohnRobertson2021-10-252021-10-2520180741-3106https://imec-publications.be/handle/20.500.12860/30380The over-reset phenomenon in Ta2O5 RRAM device investigated by the RTN-based defect probing techniqueJournal articlehttps://ieeexplore.ieee.org/document/8354795