Transient sputter yields, build-up of the altered layer and Ge-segregation as a function of the O2+ ion-fluence in SiGe

Huyghebaert, CedricCedricHuyghebaertBrijs, BertBertBrijsJanssens, TomTomJanssensVandervorst, WilfriedWilfriedVandervorst2021-10-152021-10-152003https://imec-publications.be/handle/20.500.12860/7669Transient sputter yields, build-up of the altered layer and Ge-segregation as a function of the O2+ ion-fluence in SiGeJournal article