Evaluation of stress reduction in shallow trench isolation CMOS structures via synchrotron X-ray topography, Raman spectroscopy and electrical data

McNally, P. J.P. J.McNallyCurley, J. W.J. W.CurleyBolt, M.M.BoltReader, A.A.ReaderDe Wolf, IngridIngridDe WolfTuomi, T.T.TuomiRantamäki, R.R.RantamäkiDanilewski, A. N.A. N.Danilewski2021-10-012021-10-011998https://imec-publications.be/handle/20.500.12860/2761Evaluation of stress reduction in shallow trench isolation CMOS structures via synchrotron X-ray topography, Raman spectroscopy and electrical dataOral presentation