Origin of the memory window in organic ferroelectric field-effect transistors

Kam, BenjaminBenjaminKamLi, XiaoranXiaoranLiCristoferi, ClaudioClaudioCristoferiSmits, Edsger C.P.Edsger C.P.SmitsMityashin, AlexanderAlexanderMityashinKe, Tung HueiTung HueiKeSchols, SarahSarahScholsGenoe, JanJanGenoeGelinck, GerwinGerwinGelinckHeremans, PaulPaulHeremans2021-10-202021-10-202012https://imec-publications.be/handle/20.500.12860/20895Origin of the memory window in organic ferroelectric field-effect transistorsOral presentation