ESD characterization of gate-all-around (GAA) Si nanowire devices

Chen, Shih-HungShih-HungChenHellings, GeertGeertHellingsLinten, DimitriDimitriLintenVeloso, AnabelaAnabelaVelosoScholz, MirkoMirkoScholzBoschke, RomanRomanBoschkeGroeseneken, GuidoGuidoGroesenekenThean, AaronAaronThean2021-10-222021-10-222015https://imec-publications.be/handle/20.500.12860/25068ESD characterization of gate-all-around (GAA) Si nanowire devicesProceedings paper