A deep-level transient spectroscopy study of implanted Ge p+n and n+p junctions by Pt-induced crystallization

Simoen, EddyEddySimoenLauwaert, J.J.LauwaertVrielinck, H.H.VrielinckIoannou-Sougleridis, V.V.Ioannou-Sougleridisdimoulas, A.A.dimoulas2021-10-192021-10-192011https://imec-publications.be/handle/20.500.12860/19789A deep-level transient spectroscopy study of implanted Ge p+n and n+p junctions by Pt-induced crystallizationProceedings paper