Epitaxial growth of (Si)GeSn source/drain layers for advanced gate all around devices

Loo, RogerRogerLooVohra, AnuragAnuragVohraPorret, ClémentClémentPorretHikavyy, AndriyAndriyHikavyyRosseel, ErikErikRosseelSchaekers, MarcMarcSchaekersCapogreco, ElenaElenaCapogrecoShimura, YosukeYosukeShimuraKohen, DavidDavidKohenTolle, JohnJohnTolleVandervorst, WilfriedWilfriedVandervorst2021-10-272021-10-272019-09https://imec-publications.be/handle/20.500.12860/33474Epitaxial growth of (Si)GeSn source/drain layers for advanced gate all around devicesMeeting abstracthttps://ieeexplore.ieee.org/document/8818998