Anisotropic relaxation behavior of InGaAs/GaAs selectively grown in narrow trenches on (001) Si substrates

Guo, WeimingWeimingGuoMols, YvesYvesMolsBelz, JürgenJürgenBelzBeyer, AndreasAndreasBeyerVolz, KerstinKerstinVolzSchulze, AndreasAndreasSchulzeLanger, RobertRobertLangerKunert, BernardetteBernardetteKunert2021-10-242021-10-2420170021-8979https://imec-publications.be/handle/20.500.12860/28435Anisotropic relaxation behavior of InGaAs/GaAs selectively grown in narrow trenches on (001) Si substratesJournal articlehttp://aip.scitation.org/doi/10.1063/1.4991481