Large area EUV via yield analysis for single damascene process: voltage contrast, CD and defect metrology

Blanco, VictorVictorBlancoPaolillo, SaraSaraPaolillovan der Veen, MarleenMarleenvan der VeenLariviere, StephaneStephaneLariviereLorusso, GianGianLorussoDe Poortere, EtienneEtienneDe PoortereTabery, CyrusCyrusTaberyQiao, FuFuQiaoLai, Shu-yuShu-yuLaiKea, MarcMarcKeaWang, LukeLukeWangSu, Yu ChiYu ChiSuOh, JoeJoeOhHuang, JimJimHuangChen, JimmyJimmyChenHuang, JonathanJonathanHuang2021-10-272021-10-272019https://imec-publications.be/handle/20.500.12860/32566Large area EUV via yield analysis for single damascene process: voltage contrast, CD and defect metrologyProceedings paperhttps://doi.org/10.1117/12.2536943