Prediction of the influence of induced stresses in silicon on CMOS Performance in a Cu-through-via interconnect technology

Okoro, ChukwudiChukwudiOkoroGonzalez, MarioMarioGonzalezVandevelde, BartBartVandeveldeSwinnen, BartBartSwinnenEneman, GeertGeertEnemanVerheyen, PeterPeterVerheyenBeyne, EricEricBeyneVandepitte, DirkDirkVandepitte2021-10-162021-10-162007-04https://imec-publications.be/handle/20.500.12860/12638Prediction of the influence of induced stresses in silicon on CMOS Performance in a Cu-through-via interconnect technologyProceedings paper