Flat-band voltage shift of Ruthenium gated stacks and its link with the formation of a thin Ruthenium oxide layer at the Ruthenium/dielectric interface

Li, ZilanZilanLiSchram, TomTomSchramPantisano, LuigiLuigiPantisanoStesmans, AndreAndreStesmansConard, ThierryThierryConardShamuilia, SheronSheronShamuiliaAfanasiev, ValeriValeriAfanasievAkheyar, AmalAmalAkheyarVan Elshocht, SvenSvenVan ElshochtBrunco, DavidDavidBruncoDeweerd, WimWimDeweerdNaoki, YamadaYamadaNaokiLehnen, PeerPeerLehnenDe Gendt, StefanStefanDe GendtDe Meyer, KristinKristinDe Meyer2021-10-162021-10-162007-02https://imec-publications.be/handle/20.500.12860/12483Flat-band voltage shift of Ruthenium gated stacks and its link with the formation of a thin Ruthenium oxide layer at the Ruthenium/dielectric interfaceJournal article