Compact model of the entire I-V characteristic for accurate description of the asymmetric degradation of pMOSFETs during off-state stress

Truijen, BrechtBrechtTruijenFranco, JacopoJacopoFrancoRoussel, PhilippePhilippeRousselLinten, DimitriDimitriLinten2021-10-272021-10-272019https://imec-publications.be/handle/20.500.12860/34143Compact model of the entire I-V characteristic for accurate description of the asymmetric degradation of pMOSFETs during off-state stressProceedings paperhttps://ieeexplore.ieee.org/document/8989890