Valev, V.K.V.K.ValevVanbel, M.K.M.K.VanbelVincent, BenjaminBenjaminVincentMoshchalkov, V.V.V.V.MoshchalkovCaymax, MattyMattyCaymaxVerbiest, T.T.Verbiest2021-10-192021-10-1920110741-3106https://imec-publications.be/handle/20.500.12860/19937Second harmonic generation indicates a better Si/Ge interface quality for higher temperature and with N2 rather than with H2 as the carrier gasJournal article