A compact model for the grounded-gate nMOS transistor behaviour under CDM ESD stress

Russ, ChristianChristianRussVerhaege, KoenKoenVerhaegeBock, KarlheinzKarlheinzBockRoussel, PhilippePhilippeRousselGroeseneken, GuidoGuidoGroesenekenMaes, HermanHermanMaes2021-10-012021-10-011998https://imec-publications.be/handle/20.500.12860/2918A compact model for the grounded-gate nMOS transistor behaviour under CDM ESD stressJournal article