Low-frequency noise study of Ge pMOSFETs with HfO2/Al2O3/GeOx gate stack

Fang, WenWenFangSimoen, EddyEddySimoenArimura, HiroakiHiroakiArimuraMitard, JeromeJeromeMitardThean, AaronAaronTheanLuo, JunJunLuoZhao, ChaoChaoZhaoClaeys, CorCorClaeys2021-10-222021-10-222015https://imec-publications.be/handle/20.500.12860/25263Low-frequency noise study of Ge pMOSFETs with HfO2/Al2O3/GeOx gate stackProceedings paperhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7288633