IR-LST a powerful non-invasive tool to observe crystal defects in as-grown silicon, after device processing, and in heteroepitaxial layers

Kissinger, G.G.KissingerVanhellemont, JanJanVanhellemontGräf, D.D.GräfClaeys, CorCorClaeysRichter, H.H.Richter2021-09-292021-09-291996https://imec-publications.be/handle/20.500.12860/1300IR-LST a powerful non-invasive tool to observe crystal defects in as-grown silicon, after device processing, and in heteroepitaxial layersProceedings paper