Comparative study on NBTI kinetics in Si p-FinFETs with B2H6-based and SiH4-based atomic layer deposition tungsten (ALD W) filling metal

Zhou, LongdaLongdaZhouWang, GuileiGuileiWangYin, XiaogenXiaogenYinJi, ZhigangZhigangJiLiu, QianqianQianqianLiuXu, HaoHaoXuYang, HongHongYangSimoen, EddyEddySimoenWang, XiaoleiXiaoleiWangMa, XueliXueliMaLi, YongliangYongliangLiKong, ZhenzhenZhenzhenKongJiang, HaojieHaojieJiangLuo, YingYingLuoYin, HuaxiangHuaxiangYinZhao, ChaoChaoZhaoWang, WenwuWenwuWang2022-01-252021-11-022022-01-2520200026-2714WOS:000601148900007https://imec-publications.be/handle/20.500.12860/38316Comparative study on NBTI kinetics in Si p-FinFETs with B2H6-based and SiH4-based atomic layer deposition tungsten (ALD W) filling metalJournal article10.1016/j.microrel.2020.113627WOS:000601148900007K HFO2/SIO2 RELIABILITYDEFECT PASSIVATIONGATE STACKFLUORINEIMPROVEMENTSILICON