Mitard, JeromeJeromeMitardDe Jaeger, BriceBriceDe JaegerEneman, GeertGeertEnemanDobbie, AndrewAndrewDobbieMyronov, M.M.MyronovKobayashi, MasaharuMasaharuKobayashiGeypen, JefJefGeypenBender, HugoHugoBenderVincent, BenjaminBenjaminVincentKrom, RaymondRaymondKromFranco, JacopoJacopoFrancoWinderickx, GillisGillisWinderickxVrancken, EviEviVranckenVanherle, WendyWendyVanherleWang, Wei-EWei-EWangTseng, JoshuaJoshuaTsengLoo, RogerRogerLooDe Meyer, KristinKristinDe MeyerCaymax, MattyMattyCaymaxPantisano, LuigiLuigiPantisanoLeadley, DavidDavidLeadleyMeuris, MarcMarcMeurisAbsil, PhilippePhilippeAbsilBiesemans, SergeSergeBiesemansHoffmann, Thomas Y.Thomas Y.Hoffmann2021-10-182021-10-182010https://imec-publications.be/handle/20.500.12860/17640High hole-mobility 65nm biaxially-strained Ge-pFETs: fabrication, analysis and optimizationProceedings paper