Zero-bias Si backward diodes detectors incorporating P and B delta-doping layers grown by chemical vapor deposition

Park, Si-YoungSi-YoungParkAnisha, R.R.AnishaJiang, ShengShengJiangBerger, PaulPaulBergerLoo, RogerRogerLooNguyen, DuyDuyNguyenTakeuchi, ShotaroShotaroTakeuchiGoossens, JozefienJozefienGoossensCaymax, MattyMattyCaymax2021-10-182021-10-182009https://imec-publications.be/handle/20.500.12860/15980Zero-bias Si backward diodes detectors incorporating P and B delta-doping layers grown by chemical vapor depositionProceedings paper