Impact of 7.5-MeV proton irradiation on front-back gate coupling effect in ultra thin gate oxide FD-SOI n-MOSFETs

Hayama, K.K.HayamaTakakura, K.K.TakakuraOhyama, H.H.OhyamaRafi, J.M.J.M.RafiMercha, AbdelkarimAbdelkarimMerchaSimoen, EddyEddySimoenClaeys, CorCorClaeysKokkoris, M.M.Kokkoris2021-10-152021-10-152004https://imec-publications.be/handle/20.500.12860/9007Impact of 7.5-MeV proton irradiation on front-back gate coupling effect in ultra thin gate oxide FD-SOI n-MOSFETsJournal article