Implementation of a novel silicon heterojunction IBC process flow using partial etching of doped a-Si:H with efficiencies close to 23%

Sivaramakrishnan Radhakrishnan, HariharsudanHariharsudanSivaramakrishnan RadhakrishnanGius Uddin, M.D.M.D.Gius UddinXu, MengleiMengleiXuCho, JinyounJinyounChoGhannam, MoustafaMoustafaGhannamGordon, IvanIvanGordonSzlufcik, JozefJozefSzlufcikPoortmans, JefJefPoortmans2021-10-262021-10-262018https://imec-publications.be/handle/20.500.12860/31802Implementation of a novel silicon heterojunction IBC process flow using partial etching of doped a-Si:H with efficiencies close to 23%Proceedings paperhttps://www.eupvsec-proceedings.com/proceedings?fulltext=imec&paper=46950