Etch of Yb-doped poly gates to achieve low vt Ni-FUSI CMOS

Demand, MarcMarcDemandParaschiv, VasileVasileParaschivShamiryan, DenisDenisShamiryanVeloso, AnabelaAnabelaVelosoVrancken, ChristaChristaVranckenBrus, StephanStephanBrusBoullart, WernerWernerBoullart2021-10-162021-10-162007https://imec-publications.be/handle/20.500.12860/12041Etch of Yb-doped poly gates to achieve low vt Ni-FUSI CMOSProceedings paper