Carrier lifetime analysis in thin gate oxide FD-SOI n-MOSFETs by gate-induced drain current tranients

Hayama, K.K.HayamaTakakura, K.K.TakakuraOhyama, H.H.OhyamaRafi, J.M.J.M.RafiMercha, AbdelkarimAbdelkarimMerchaSimoen, EddyEddySimoenClaeys, CorCorClaeys2021-10-172021-10-1720080957-4522https://imec-publications.be/handle/20.500.12860/13846Carrier lifetime analysis in thin gate oxide FD-SOI n-MOSFETs by gate-induced drain current tranientsJournal article