Performance optimization of Au-free lateral AlGaN/GaN schottky barrier diode with gated edge termination on 200-mm silicon substrate

Hu, JieJieHuStoffels, SteveSteveStoffelsLenci, SilviaSilviaLenciBakeroot, BenoitBenoitBakerootDe Jaeger, BriceBriceDe JaegerVan Hove, MarleenMarleenVan HoveLiang, HuHuLiangZhao, MingMingZhaoGroeseneken, GuidoGuidoGroesenekenDecoutere, StefaanStefaanDecoutere2021-10-232021-10-232016https://imec-publications.be/handle/20.500.12860/26745Performance optimization of Au-free lateral AlGaN/GaN schottky barrier diode with gated edge termination on 200-mm silicon substrateJournal articlehttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7387770