Effects of Al2O3 dielectric cap and nitridation on device performance, scalability, and reliability for advanced high-k/metal gate pMOSFET applications

Chang, VincentVincentChangRagnarsson, Lars-AkeLars-AkeRagnarssonYu, HongYuHongYuYuAoulaiche, MarcMarcAoulaicheConard, ThierryThierryConardYin, KaiMinKaiMinYinSchram, TomTomSchramMaes, Jan WillemJan WillemMaesDe Gendt, StefanStefanDe GendtBiesemans, SergeSergeBiesemans2021-10-162021-10-162007https://imec-publications.be/handle/20.500.12860/11841Effects of Al2O3 dielectric cap and nitridation on device performance, scalability, and reliability for advanced high-k/metal gate pMOSFET applicationsJournal article