Defect passivation by means of PECVD-nitride and hydrogenation for crystalline Si solar cells

Poortmans, JefJefPoortmansSzlufcik, JozefJozefSzlufcikDuerinckx, FilipFilipDuerinckxDe Clercq, KoenKoenDe ClercqHorzel, JörgJörgHorzelVermeulen, TomTomVermeulenEvrard, OlivierOlivierEvrardNijs, JohanJohanNijsMertens, RobertRobertMertens2021-09-292021-09-291996https://imec-publications.be/handle/20.500.12860/1419Defect passivation by means of PECVD-nitride and hydrogenation for crystalline Si solar cellsOral presentation