Use of X-ray techniques in the development of Ge MOSFET devices

Sun, JianwuJianwuSunHikavyy, AndriyAndriyHikavyyShimura, YosukeYosukeShimuraWitters, LiesbethLiesbethWittersTielens, HildeHildeTielensRyan, PaulPaulRyanLoo, RogerRogerLoo2021-10-222021-10-222014https://imec-publications.be/handle/20.500.12860/24574Use of X-ray techniques in the development of Ge MOSFET devicesMeeting abstract