On the impact of Gate field-plate length and barrier layer thickness on TDDB lifetime of GaN-on-Si MISHEMT devices for RF/5G/mm-Wave applications

Lin, Chien-YuChien-YuLinPutcha, VamsiVamsiPutchaAlian, AlirezaAlirezaAlianWaldron, NiamhNiamhWaldronLinten, DimitriDimitriLintenCollaert, NadineNadineCollaertChang, Ting-ChangTing-ChangChang2022-01-192021-11-022022-01-1920201930-8841WOS:000659349800005https://imec-publications.be/handle/20.500.12860/37871On the impact of Gate field-plate length and barrier layer thickness on TDDB lifetime of GaN-on-Si MISHEMT devices for RF/5G/mm-Wave applicationsProceedings paper10.1109/IIRW49815.2020.9312857978-1-7281-7058-9WOS:000659349800005CURRENT COLLAPSE