Explanation of nMOSFET substrate current after hard gate oxide breakdown

Kaczer, BenBenKaczerDegraeve, RobinRobinDegraeveDe Keersgieter, AnAnDe KeersgieterRasras, MahmoudMahmoudRasrasGroeseneken, GuidoGuidoGroeseneken2021-10-142021-10-142001https://imec-publications.be/handle/20.500.12860/5386Explanation of nMOSFET substrate current after hard gate oxide breakdownJournal article