Process optimization and integration of trimethylsilane deposited a-SiC:H and SiOC:H dielectric thin films for damascene processing

Gray, WilliamWilliamGrayLoboda, M.M.LobodaStruyf, HerbertHerbertStruyfVan Hove, MarleenMarleenVan HoveDonaton, R. A.R. A.DonatonSleeckx, ErikErikSleeckxStucchi, MicheleMicheleStucchiGao, TengTengGaoBoullart, WernerWernerBoullartCoenegrachts, BartBartCoenegrachtsMaenhoudt, MireilleMireilleMaenhoudtVanhaelemeersch, SergeSergeVanhaelemeerschMeynen, HermanHermanMeynenMaex, KarenKarenMaex2021-10-142021-10-142000https://imec-publications.be/handle/20.500.12860/4402Process optimization and integration of trimethylsilane deposited a-SiC:H and SiOC:H dielectric thin films for damascene processingOral presentation