Time dependent dielectric breakdown and stress induced leakage current characteristics of 0.7nm EOT HfO2 pFETs

O'Connor, RobertRobertO'ConnorHughes, GregGregHughesKauerauf, ThomasThomasKauerauf2021-10-192021-10-1920111530-4388https://imec-publications.be/handle/20.500.12860/19498Time dependent dielectric breakdown and stress induced leakage current characteristics of 0.7nm EOT HfO2 pFETsJournal article