Highly activated phosphorus in CVD Ge layers using in-situ doping at low temperature enabled by high order Ge precursors: toward Group-IV optical interconnections

Shimura, YosukeYosukeShimuraSrinivasan, AshwynAshwynSrinivasanVan Thourhout, DriesDriesVan ThourhoutVan Deun, RikRikVan DeunPantouvaki, MariannaMariannaPantouvakiVan Campenhout, JorisJorisVan CampenhoutLoo, RogerRogerLoo2021-10-232021-10-232016https://imec-publications.be/handle/20.500.12860/27305Highly activated phosphorus in CVD Ge layers using in-situ doping at low temperature enabled by high order Ge precursors: toward Group-IV optical interconnectionsMeeting abstract